InAs/Al<sub>0.4</sub>Ga<sub>0.6</sub>Sb side gated vertical TFET on GaAs substrate - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2016

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hal-03286183 , version 1 (29-07-2021)

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Vinay Chinni, Mohammed Zaknoune, X. Wallart, L. Desplanque. InAs/Al0.4Ga0.6Sb side gated vertical TFET on GaAs substrate. 28th International Conference on Indium Phosphide and Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), Jun 2016, Toyama, Japan. ⟨10.1109/ICIPRM.2016.7528571⟩. ⟨hal-03286183⟩
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