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Communication Dans Un Congrès Année : 2014

A GaN Schottky diode-based analog phase shifter MMIC

Résumé

A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in view of its potential for robust power operation. The phase shifter presents analog phase shifting capability up to 45 degrees with similar to 7 dB insertion loss and a maximum VSWR of 2: 1 in the 32 to 38 GHz range. Good power handling capability and robust performance is demonstrated through large signal analysis and experimental characterization.
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Dates et versions

hal-03286170 , version 1 (13-07-2021)

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Chong Jin, Etienne Okada, Marc Faucher, Damien Ducatteau, Mohammed Zaknoune, et al.. A GaN Schottky diode-based analog phase shifter MMIC. 9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.96-99, ⟨10.1109/EuMIC.2014.6997800⟩. ⟨hal-03286170⟩
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