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Communication Dans Un Congrès Année : 2013

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Résumé

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the obtained transit delay contributions, the effective electron velocity is estimated to 0.85x10(7) cm.s(-1). In addition, the effect of the image charge on the drain delay is experimentally demonstrated through the extraction of the image charge on the drain delay is experimentally demonstrated through the extraction of the mirroring coefficient alpha close to the predicted simulation value.
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Dates et versions

hal-03285110 , version 1 (13-07-2021)

Identifiants

  • HAL Id : hal-03285110 , version 1

Citer

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, et al.. Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate. 43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩
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