Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy
Micka Bah
(1)
,
Damien Valente
(1)
,
Marie Lesecq
(2, 3)
,
N. Defrance
(2, 3)
,
Maxime Garcia Barros
(2)
,
Jean-Claude de Jaeger
(2, 3)
,
Eric Frayssinet
(4)
,
Remi Comyn
(4)
,
Thi Huong Ngo
(4)
,
Daniel Alquier
(1)
,
Yvon Cordier
(4)
Micka Bah
- Fonction : Auteur
- PersonId : 175834
- IdHAL : micka-bah
- ORCID : 0000-0001-6636-2854
- IdRef : 185151205
Damien Valente
- Fonction : Auteur
- PersonId : 1093973
Marie Lesecq
- Fonction : Auteur
- PersonId : 746612
- IdHAL : marie-lesecq
- ORCID : 0000-0002-3735-1790
- IdRef : 120565455
N. Defrance
- Fonction : Auteur
- PersonId : 747240
- IdHAL : nicolas-defrance
- ORCID : 0000-0002-3944-9652
Jean-Claude de Jaeger
- Fonction : Auteur
- PersonId : 747322
- IdHAL : jean-claude-dejaeger
Thi Huong Ngo
- Fonction : Auteur
- PersonId : 1081635
Daniel Alquier
- Fonction : Auteur
- PersonId : 18459
- IdHAL : daniel-alquier
- ORCID : 0000-0003-1345-8195
- IdRef : 128188308
Yvon Cordier
- Fonction : Auteur
- PersonId : 750365
- IdHAL : yvon-cordier
- ORCID : 0000-0003-3720-9409
- IdRef : 128170794
Résumé
This work aims to understand the origin of propagation losses in GaN-on-Si devices at microwave frequencies thanks to original AFM's electrical modes such as scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). AlN films on Si substrate were grown using Metalorganic Vapor Phase Epitaxy (MOVPE) technique. SCM and SSRM measurements evidence a p-type conductive channel as well as a pn-junction beneath the AlN/Si interface. The diffusion depths of Al and Ga atoms obtained by Secondary Ion Mass Spectroscopy (SIMS) are in good agreement with those deduced from SCM and SSRM. Sample grown at lower temperature (1000°C) exhibits a conductive channel and a junction over a shallow depth explaining its lower propagation losses in comparison with those synthesized at higher temperature (1150°C). Thus, monitoring the dopant diffusion beneath the AlN/Si interface is crucial to achieve efficient GaN-on-Si microwave power devices.
Domaines
Sciences de l'ingénieur [physics]Format du dépôt | Fichier |
---|---|
Type de dépôt | Communication dans un congrès |
Titre |
en
Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy
|
Résumé |
fr
This work aims to understand the origin of propagation losses in GaN-on-Si devices at microwave frequencies thanks to original AFM's electrical modes such as scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). AlN films on Si substrate were grown using Metalorganic Vapor Phase Epitaxy (MOVPE) technique. SCM and SSRM measurements evidence a p-type conductive channel as well as a pn-junction beneath the AlN/Si interface. The diffusion depths of Al and Ga atoms obtained by Secondary Ion Mass Spectroscopy (SIMS) are in good agreement with those deduced from SCM and SSRM. Sample grown at lower temperature (1000°C) exhibits a conductive channel and a junction over a shallow depth explaining its lower propagation losses in comparison with those synthesized at higher temperature (1150°C). Thus, monitoring the dopant diffusion beneath the AlN/Si interface is crucial to achieve efficient GaN-on-Si microwave power devices.
|
Auteur(s) |
Micka Bah
1
, Damien Valente
1
, Marie Lesecq
2, 3
, N. Defrance
2, 3
, Maxime Garcia Barros
2
, Jean-Claude de Jaeger
2, 3
, Eric Frayssinet
4
, Remi Comyn
4
, Thi Huong Ngo
4
, Daniel Alquier
1
, Yvon Cordier
4
1
GREMAN - UMR 7347 -
GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
( 230940 )
- Bât. E, 20 avenue Monge, 37200 Tours
- France
2
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
3
PUISSANCE - IEMN -
Puissance - IEMN
( 1067481 )
- Groupe Puissance - (Microwave Power Devices group) - IEMN UMR8520
- France
4
CRHEA -
Centre de recherche sur l'hétéroepitaxie et ses applications
( 409 )
- Bat. 5 Rue Bernard Grégory 06560 VALBONNE
- France
|
Commentaire |
ORAL
|
Langue du document |
Anglais
|
Date de production/écriture |
2021-06-14
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Invité |
Non
|
Audience |
Internationale
|
Actes |
Oui
|
Date de publication |
2021-06-14
|
Titre de la collection |
Proceedings of Wocsdice Exmatec 2021
|
Volume |
217
|
Page/Identifiant |
131-132
|
Titre du congrès |
Wocsdice Exmatec 2021
|
Date début congrès |
2021-06-14
|
Date fin congrès |
2021-06-17
|
Ville |
Bristol (virtual)
|
Pays |
Royaume-Uni
|
Référence interne |
|
Projet(s) ANR |
|
Financement |
|
Domaine(s) |
|
Collaboration/Projet |
|
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)
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