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Communication Dans Un Congrès Année : 2021

HEMT GaN Normally Off Reliability comparison

Résumé

Recently, new HEMT GaN Normally Off with a buried Player have been developed by the LAAS Laboratory to propose a device adapted to embedded power electronics. In this article, several Normally Off HEMT GaN architectures are compared using TCAD Sentaurus simulation: Gate Recess, P-GaN, and Buried P-GaN. Main failure mechanisms are compared to determine the most robust topology. The new structure with P-GaN Buried shows promising properties with a higher threshold voltage stability.
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Dates et versions

hal-03283804 , version 1 (12-07-2021)

Identifiants

  • HAL Id : hal-03283804 , version 1

Citer

Tanguy Phulpin, Thy Bich Hop Dinh. HEMT GaN Normally Off Reliability comparison. 4ème Symposium de Génie Électrique (SGE 2021), Jul 2021, Nantes, France. ⟨hal-03283804⟩
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