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Communication Dans Un Congrès Année : 2021

AlGaN/GaN HEMTs on AlN substrate for power electronics

Résumé

GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power devices. In this work, we report on AlGaN/GaN-on-AlN HEMTs using thick and thin GaN channels in comparison with GaN-on-Si HEMTs using a similar thin epi-design.
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Dates et versions

hal-03279160 , version 1 (06-07-2021)

Identifiants

  • HAL Id : hal-03279160 , version 1

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Jash Mehta, Idriss Abid, Thi Huong Ngo, Yvon Cordier, F Medjdoub. AlGaN/GaN HEMTs on AlN substrate for power electronics. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom. ⟨hal-03279160⟩
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