AlGaN/GaN HEMTs on AlN substrate for power electronics
Résumé
GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power devices. In this work, we report on AlGaN/GaN-on-AlN HEMTs using thick and thin GaN channels in comparison with GaN-on-Si HEMTs using a similar thin epi-design.
Domaines
Sciences de l'ingénieur [physics]| Origine | Fichiers produits par l'(les) auteur(s) |
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