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Communication Dans Un Congrès Année : 2015

Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors

F. Boone
Maher, Hassan

Résumé

This paper reports on the development of a thermo-electrical non-linear model for sub-100 nm gate length AR:aN/GaN High-Electron-Mobility Transistors (HEMT) grown on silicon (111) substrate by Molecular Beam Epitaxy (MBE). The presented model benefits from the innovative implementations of a sub-network taking into account access resistances frequency dispersion and a double intrinsic current source well suited for DC/RF dispersion losses. A comparison between simulation and experimental results under large-signal operating conditions at both 40 GEls and 94 C,Hz demonstrates the functionality of the implemented model.
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Dates et versions

hal-03276915 , version 1 (02-07-2021)

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Adrien Cutivet, Philippe Altuntas, N. Defrance, Etienne Okada, Vanessa Avramovic, et al.. Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors. 10th European Microwave Integrated Circuits Conference (EuMIC), Sep 2015, Paris, France. pp.93-96, ⟨10.1109/EuMIC.2015.7345076⟩. ⟨hal-03276915⟩
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