Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate - Archive ouverte HAL
Article Dans Une Revue IEEE Electron Device Letters Année : 2015

Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate

Résumé

This letter reports on the demonstration of microwave power performance at 40 GHz on AlGaN/GaN high-electron mobility transistor grown on silicon (111) substrate by molecular beam epitaxy. A maximum dc current density of 1.1 A.mm(-1) and a peak extrinsic transconductance of 374 mS.mm(-1) are obtained for 75-nm gate length device. At V-DS = 25 V, continuous-wave output power density of 2.7 W.mm(-1) is achieved at 40 GHz associated with 12.5% power-added efficiency and a linear power gain (G(p)) of 6.5 dB. The device exhibits an intrinsic current gain cutoff frequency F-T of 116 GHz and a maximum oscillation frequency F-MAX of 150 GHz. This performance demonstrates the capability of low cost microwave power devices up to Ka-band.
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Dates et versions

hal-03276913 , version 1 (02-07-2021)

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Philippe Altuntas, François Lecourt, Adrien Cutivet, N. Defrance, Etienne Okada, et al.. Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate. IEEE Electron Device Letters, 2015, 36 (4), pp.303-305. ⟨10.1109/LED.2015.2404358⟩. ⟨hal-03276913⟩
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