Electrothermal modeling of GaN power transistor for high frequency power converter design
Résumé
This work proposes the electrothermal modeling of a packaged GaN power transistor in order to evaluate by simulation its performances in a 200 W - 1 MHz DC/DC converter. The complete electrical modeling of the high frequency converter using EM-circuit co-simulations is presented. After validation of the GaN transistor switchings waveforms and estimation of power losses, the operating temperature of the device is simulated and experimentally validated.