A method to determine wide bandgap power devices packaging interconnections
Loris Pace
(1, 2)
,
N. Defrance
(1, 2)
,
Jean-Claude de Jaeger
(1, 2)
,
Arnaud Videt
(3)
,
Nadir Idir
(3)
Loris Pace
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- Fonction : Auteur correspondant
- PersonId : 1233930
- IdHAL : loris-pace
- ORCID : 0000-0003-3853-0405
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N. Defrance
- Fonction : Auteur
- PersonId : 747240
- IdHAL : nicolas-defrance
- ORCID : 0000-0002-3944-9652
Jean-Claude de Jaeger
- Fonction : Auteur
- PersonId : 747322
- IdHAL : jean-claude-dejaeger
Arnaud Videt
- Fonction : Auteur
- PersonId : 741202
- IdHAL : arnaud-videt
- ORCID : 0000-0003-4062-0709
- IdRef : 133219038
Nadir Idir
- Fonction : Auteur
- PersonId : 1104036
Résumé
Wide Bandgap (WBG) power devices show very good characteristics for high frequency operation in power converters, leading to a better power integration by reducing size and weight of passive components. Access parasitics such as resistances and inductances related to packaging and interconnections are important parameters to determine in order to better predict high frequency switching of WBG power devices. In order to design a 1 MHz hybrid GaN/SiC power converter, this paper reports on the characterization of packaged power devices such as Gallium Nitride (GaN) transistors and Silicon Carbide (SiC) Schottky diodes using S-parameters in order to extract the device parasitics. The method lays on a calibration procedure carried out using specific test fixtures designed on FR4 Printed Circuit Board (PCB). The proposed method has the objective to be suitable for a wide range of power devices.
Domaines
Sciences de l'ingénieur [physics]Format du dépôt | Notice |
---|---|
Type de dépôt | Communication dans un congrès |
Titre |
en
A method to determine wide bandgap power devices packaging interconnections
|
Résumé |
en
Wide Bandgap (WBG) power devices show very good characteristics for high frequency operation in power converters, leading to a better power integration by reducing size and weight of passive components. Access parasitics such as resistances and inductances related to packaging and interconnections are important parameters to determine in order to better predict high frequency switching of WBG power devices. In order to design a 1 MHz hybrid GaN/SiC power converter, this paper reports on the characterization of packaged power devices such as Gallium Nitride (GaN) transistors and Silicon Carbide (SiC) Schottky diodes using S-parameters in order to extract the device parasitics. The method lays on a calibration procedure carried out using specific test fixtures designed on FR4 Printed Circuit Board (PCB). The proposed method has the objective to be suitable for a wide range of power devices.
|
Auteur(s) |
Loris Pace
1, 2
, N. Defrance
1, 2
, Jean-Claude de Jaeger
1, 2
, Arnaud Videt
3
, Nadir Idir
3
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1296 )
- [Univ. Lille, CNRS, Ecole Centrale Lille, Yncréa-ISEN, UVHC] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
2
PUISSANCE - IEMN -
Puissance - IEMN
( 1067485 )
- Groupe Puissance - IEMN UMR8520
- France
3
L2EP -
Laboratoire d’Électrotechnique et d’Électronique de Puissance - ULR 2697
( 13338 )
- Université de Lille - Bâtiment ESPRIT, Cité scientifique - 59655 Villeneuve d'Ascq
- France
|
Titre de la collection |
Proceedings of 23rd IEEE Workshop on Signal and Power Integrity, SPI 2019
|
Page/Identifiant |
1-4
|
Langue du document |
Anglais
|
Source |
23rd IEEE Workshop on Signal and Power Integrity (SPI)
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Invité |
Non
|
Audience |
Internationale
|
Actes |
Oui
|
Date de publication |
2019
|
Titre du congrès |
23rd IEEE Workshop on Signal and Power Integrity (SPI)
|
Date début congrès |
2019-06-18
|
Date fin congrès |
2019-06-21
|
Ville |
Chambery
|
Pays |
France
|
Domaine(s) |
|
Éditeur commercial |
|
Financement |
|
Mots-clés |
en
S-parameters, Packaging interconnections, access parasitics, GaN transistor, SiC diode
|
DOI | 10.1109/SaPIW.2019.8781641 |
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