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Communication Dans Un Congrès Année : 2021

Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes

Résumé

The onset and pinch-off voltages shift of lateral GaN field-effect rectifier diodes (L-FER) and normally-off HEMTs are studied. It is shown that a short duration of low power SF6 plasma followed by a low temperature annealing permits to get an effective and stabilized fluorine ion implantation in the AlGaN barrier, contributing to reduce the back shift of both devices threshold voltages.
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Dates et versions

hal-03275589 , version 1 (01-07-2021)

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  • HAL Id : hal-03275589 , version 1

Citer

Quentin Fornasiero, N. Defrance, Marie Lesecq, Eric Frayssinet, Yvon Cordier, et al.. Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes. Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.50-52. ⟨hal-03275589⟩
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