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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2021

Extraction of True Finger Temperature from Measured Data in Multi-Finger Bipolar Transistors

Résumé

In this brief, we propose a step-by-step strategy to accurately estimate the finger temperature in a silicon based multi-finger bipolar transistor structure from conventional measurements. First we extract the nearly zero-power self-heating resistances (R th,ii (Ta)) and thermal coupling factors (cij(Ta)) at a given ambient temperature. Now, by applying the superposition principle on these variables at nearly zero-power, where the linearity of the heat diffusion equation is preserved, we estimate an effective thermal resistance (R th,i (Ta)) and the corresponding revised finger temperature Ti(Ta). Finally, the Kirchhoff's transformation on Ti(Ta) yields the true temperature at each finger (Ti(Ta, P d)). The proposed extraction technique automatically includes the effects of back-end-of-line metal layers and different types of trenches present within the transistor structure. The technique is first validated against 3D TCAD simulation results of bipolar transistors with different emitter dimensions and then applied on actual measured data obtained from state-of-the-art multi-finger SiGe HBT from STMicroelectronics B5T technology. It is observed that the superposition of raw measured data at around 40 mW power underestimates the true finger temperature by around 10%.
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Dates et versions

hal-03273341 , version 1 (29-06-2021)

Identifiants

Citer

Aakashdeep Gupta, K. Nidhin, Suresh Balanethiram, Rosario d'Esposito, Sebastien Fregonese, et al.. Extraction of True Finger Temperature from Measured Data in Multi-Finger Bipolar Transistors. IEEE Transactions on Electron Devices, 2021, 68 (3), pp.1385-1388. ⟨10.1109/TED.2021.3054602⟩. ⟨hal-03273341⟩
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