Wake-up effect is a major issue for ferroelectric HfO2-based memory devices. Here, two TiN/Hf0.5Zr0.5O2/TiN structures deposited by magnetron sputtering on silicon are compared. The maximum remanant polarization is higher than 21µC/cm² for both samples, a strong difference is observed in the electrical behavior. For the mesa sample, the difference between maximal and initial Pr is only 3µC/cm² whereas it is around 14µC/cm² in the non-mesa case. We discuss the root causes of these behaviors in light of structural results. Various applications have been suggested for fluorite-structure ferroelectrics due to their advantages over the conventional perovskite-structure ferroelectrics. In this presentation we will focus on (Hf,Zr)O2 (HZO) thin films deposition for the capacitor of Ferroelectric Random Access Memories (FRAM) in the 1Transitor-1Capacitor (1T-1C) model. (Hf,Zr)O2 thin films are studied to either fully understand the stabilization of the ferroelectric phase (f-phase) or to fit with industrial requirements. Samples are stacks of Si/TiN/Hf0.5Zr0.5O/TiN/Pt. All materials are grown by sputtering at room temperature following by a rapid thermal annealing at 450°C during 30 seconds under N2 atmosphere. The samples are called NM, and M. NM and M refers to two different architectures, respectively non-mesa and mesa structures. We report the fabrication of two samples deposited by magnetron sputtering with excellent performances, quite similar to samples deposited by Atomic Layer Deposition. Pr values are among the highest for samples deposited by sputtering. Although the N-sample and NM-samples show very close Pr values, the two samples show completely different electrical behaviors. During cycling, the increase of Pr value for the NM-sample is more than an order of magnitude higher than the M-sample. It is accompanied by a decrease of the endurance which is two order of magnitude higher for the NM-sample than for the M-sample. As electrical behaviors are not the same, for low stress conditions M-sample has a higher Pr value during cycling whereas for high stress conditions NM-sample has a higher Pr value during cycling. As a matter of fact, it has been proven that maximum Pr values are more sensitive to stress conditions than the structures themselves. The origins of the different electrical behaviors come from the micro-crystalline structures of the two samples, according to GIXRD results. The crystallization takes place during the annealing step. During annealing, M-sample is built with a TiN TE fully covering the HZO layer whereas the TiN covers only partially the HZO layer in case of the NM-sample. It induces different stress states which lead to two different micro-crystalline patterning. The M-sample shows no monoclinic peak, whereas the NM-sample shows many monoclinic orientations. It can explain the huge reduction of the wake-up effect.