A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization

Résumé

In this paper, an integrated noise source realized with silicon Schottky diodes is presented. To this aim, dedicated test structures have been designed and characterized; the corresponding Schottky diodes feature an avalanche breakdown voltage close to -6 V. When biased around this breakdown voltage ( their anode is grounded), an adjustable Excess Noise Ratio, ranging between 4 dB to 20 dB, was achieved in D-band. Hence, because of its ability to be integrated within a Si process, one can strongly expect the use of this solid state noise source for high frequency in-situ noise characterization of advanced Si CMOS or BiCMOS technologies, with the aim to target millimeter-wave applications.
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Dates et versions

hal-03272703 , version 1 (28-06-2021)

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Joao Carlos Azevedo Goncalves, Thomas Quemerais, Daniel Gloria, Gregory Avenier, Sylvie Lepilliet, et al.. A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization. International Conference on Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. ⟨10.1109/ICMTS.2017.7954271⟩. ⟨hal-03272703⟩
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