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Communication Dans Un Congrès Année : 2018

Investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz

Résumé

This paper describes millimeter wave (mmW) on-wafer continues wave (CW) power detection using dedicated high frequency diode junction, integrated on SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed for two test structures configurations in order to evaluate the potential of this diode junction for power detection as well as for sub-Terahertz Transmission Link on 220 to 320 GHz Frequency Range. The power detection is performed by biasing the diode on its forward regime. That allows to obtain a voltage responsivity (gamma) for variable bias current increasing from 1 nA to 5 A and exhibiting a corresponding gamma decreasing from 3000 V/W to 500 V/W at 320 GHz.
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Dates et versions

hal-03272698 , version 1 (06-07-2022)

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Joao Carlos Azevedo Goncalves, Issa Alaji, Daniel Gloria, Sylvie Lepilliet, Francois Danneville, et al.. Investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz. 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2018, Nagoya, Japan. ⟨10.1109/IRMMW-THz.2018.8510217⟩. ⟨hal-03272698⟩
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