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Communication Dans Un Congrès Année : 2015

Characterization of flexible CMOS technology tranferred onto a metallic foil

Résumé

In this work we demonstrate a method to transfer high-performance industrial CMOS circuits thinned down to 5.7 mu m and bond onto a 25-mu m-thick stainless steel foil with a 800-nm-thick indium layer. The bonding is performed at the temperature of 100 degrees C with an applied pressure of 1.2 bar. The die stack transferred onto the metallic substrate comprises the 200-nm-thick active layer and the 5.5-mu m-thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that DC and RF performances are invariant after the transfer onto this metallic substrate. Unity-current-gain cutoff and maximum frequencies as high as 163/188 GHz for n-MOSFETs and 100/159 GHz for p-MOSFETs have been measured.
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Dates et versions

hal-03272691 , version 1 (28-06-2021)

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Justine Philippe, Aurelien Lecavelier Des Etangs-Levallois, Philip Latzel, Francois Danneville, J.F. Robillard, et al.. Characterization of flexible CMOS technology tranferred onto a metallic foil. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Jan 2015, Bologna, Italy. ⟨10.1109/ULIS.2015.7063747⟩. ⟨hal-03272691⟩
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