Advantages of ALD over evaporation deposition for high-K materials integration in high power capacitive RF MEMS - Archive ouverte HAL
Communication Dans Un Congrès Année : 2017

Advantages of ALD over evaporation deposition for high-K materials integration in high power capacitive RF MEMS

Résumé

We report a study over a wide range of high-K dielectric materials (AlxOy, HfOx, TiOx.) deposited by different techniques (Evaporation, ALD, PEALD ... ) for high power RF applications. Main results show that ALD technique is matching the McPherson trend based on thermochemical prediction. Furthermore ALD materials are promising to meet high power requirements for capacitive RF MEMS switches. As a result, Thermal ALD HfO2 was integrated in high power capacitive RF MEMS switches in order to improve their RF performances, power handling and reliability.

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Dates et versions

hal-03270114 , version 1 (24-06-2021)

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Guillaume Croizier, Paolo Martins, M. Le Bailiff, Raphaël Aubry, S. Bansropun, et al.. Advantages of ALD over evaporation deposition for high-K materials integration in high power capacitive RF MEMS. 19th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Jun 2017, Kaohsiung, Taiwan. pp.1237-1240, ⟨10.1109/TRANSDUCERS.2017.7994279⟩. ⟨hal-03270114⟩
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