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Journal Articles IEEE Electron Device Letters Year : 2016

First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor

Abel Ebongue
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  • PersonId : 1103219

Abstract

This letter reports on the first demonstration of microwave power performance at 10 GHz on flexible AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at V-GS = 0 V and a peak extrinsic transconductance of 293 mS/mm are obtained for a 2 x 50 x 0.1 mu m(2) flexible device. At V-DS = 5 V, a continuous-wave saturation output power density of 0.42 W/mm is achieved at 10 GHz, and associated with a maximum power-added efficiency of 29.8% and a linear power gain of 15.8 dB. The device exhibits an intrinsic current gain cutoff frequency F-T of 38 GHz and a maximum oscillation frequency F-MAX of 75 GHz. This result demonstrates the capability of flexible GaN-based HEMT for the development of applications requiring mechanical flexibility, high frequency operation, as well as high power performance.
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Dates and versions

hal-03270110 , version 1 (24-06-2021)

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Sarra Mhedhbi, Marie Lesecq, Philippe Altuntas, N. Defrance, Etienne Okada, et al.. First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor. IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩. ⟨hal-03270110⟩
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