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Communication Dans Un Congrès Année : 2016

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Ignacio Íñiguez-De-La-Torre
Tomás González
Javier Mateos

Résumé

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of traps in the GaN channel and the ohmic contacts. These effects have been modeled in the equivalent circuit of the transistors achieving a satisfactory agreement with the measured S-parameters.
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Dates et versions

hal-03270103 , version 1 (24-06-2021)

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Hector Sanchez-Martin, Oscar Garcia-Perez, Ignacio Íñiguez-De-La-Torre, Susana Perez, Tomás González, et al.. Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs. 11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩. ⟨hal-03270103⟩
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