Experimental investigation of stochastic resonance in a 65 nm CMOS artificial neuron - Archive ouverte HAL
Communication Dans Un Congrès Année : 2017

Experimental investigation of stochastic resonance in a 65 nm CMOS artificial neuron

Sara Hedayat
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Résumé

This work proposes an experimental demonstration of the stochastic resonance, a phenomenon widely observed in biology using a 65 nm CMOS artificial neuron. The stochastic resonance has been revealed through two different statistical studies. Moreover, when optimal, a signal to noise ratio at the output of the artificial neuron of 22.4 dB is achieved, for an ultra low power consumption, lower than 60 pW.
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Dates et versions

hal-03270101 , version 1 (24-06-2021)

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Sara Hedayat, Ilias Sourikopoulos, Christophe Loyez, Francois Danneville, Laurent Clavier, et al.. Experimental investigation of stochastic resonance in a 65 nm CMOS artificial neuron. International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. ⟨10.1109/ICNF.2017.7985962⟩. ⟨hal-03270101⟩
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