Impact of the bending on the electroluminescence of flexible InGaN/GaN light-emitting diodes - Archive ouverte HAL Access content directly
Journal Articles IEEE Photonics Technology Letters Year : 2016

Impact of the bending on the electroluminescence of flexible InGaN/GaN light-emitting diodes

Abel Ebongue
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Abstract

The role that the mother substrate plays to influence the performance of InGaN/GaN-based light-emitting diodes (LEDs) onto the adhesive flexible tapes is addressed in this letter. For this purpose, the electroluminescent (EL) spectra and current density-voltage (J-V) characteristics of flexi-LEDs are studied under different convex bending configurations (from a curvature radius of infinity to 1.4 cm), showing only one peak around 442 nm in all the cases. Both the EL spectra and J-V characteristics are affected by the applied tensile stress when the flexi-LED is bent. In fact, an increase of the applied tensile strain from 0.02% to 0.09% results in a red-shift of the EL peak energy by 3 meV at 0.7 mA, and a drop of the current at high forward bias. In addition, such flexi-LEDs exhibit a reversible response when a significant mechanical deformation is applied.
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hal-03270097 , version 1 (24-06-2021)

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Gema Tabares Jimenez, Sarra Mhedhbi, Marie Lesecq, Benjamin Damilano, Julien Brault, et al.. Impact of the bending on the electroluminescence of flexible InGaN/GaN light-emitting diodes. IEEE Photonics Technology Letters, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩. ⟨hal-03270097⟩
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