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Communication Dans Un Congrès Année : 2019

Gigahertz frequency graphene transistor, high yield process and good stability under strain

Résumé

We report a bonding free fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with different gate length (100 nm, 200 nm and 300 nm) and different channel width (12µm,24µm and 50µm) are successfully fabricated on Kapton substrate. The transistor yield is more than 80%. Our GFETs exhibit good stability with 0.5% strain applied. Our finding ensures for next application of RF circuit based on graphene transistor.
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Dates et versions

hal-03259628 , version 1 (14-06-2021)

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Wei Wei, S. Mhedhbi, S. Salk, T. Levert, O. Txoperena, et al.. Gigahertz frequency graphene transistor, high yield process and good stability under strain. 14th European Microwave Integrated Circuits Conference, EuMIC 2019, Sep 2019, Paris, France. pp.208-211, ⟨10.23919/EuMIC.2019.8909548⟩. ⟨hal-03259628⟩
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