Optoelectronic mixing with high-frequency graphene transistors
Résumé
Abstract Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend on the SLG Fermi level ( E F ). At low E F (<130 meV), a positive photocurrent is generated, while at large E F (>130 meV), a negative photobolometric current appears. This allows our devices to operate up to at least 67 GHz. Our results pave the way for GFETs optoelectronic mixers for mm-wave applications, such as telecommunications and radio/light detection and ranging (RADAR/LIDARs.)
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Requiert hal-03542160 Autre A. Montanaro, W. Wei, D. de Fazio, U. Sassi, G. Soavi, et al.. Author Correction: Optoelectronic mixing with high-frequency graphene transistors (Nature Communications, (2021), 12, 1, (2728), 10.1038/s41467-021-22943-1). 2021, pp.3507. ⟨10.1038/s41467-021-23916-0⟩. ⟨hal-03542160⟩
AUTHOR CORRECTION: Optoelectronic mixing with high-frequency graphene transistors (Nature Communications, (2021), 12, 1, (2728), 10.1038/s41467-021-22943-1)