Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer
Résumé
In this paper, electrical and thermal analysis of short gate length AlGaN/GaN HEMTs (high electron mobility transistors) transferred onto diamond substrate through aluminum nitride (AlN) layer are provided. The specific transfer technology uses sputtered AlN as bonding layer. An improvement in maximum DC current density of 14% is observed after transfer on the diamond substrate, with attractive RF performances as well. Lag effects are evaluated thanks to pulsed measurement. Thermal analysis is also proposed to quantify the effects of bonding on self-heating. Both electrical and thermal characterizations are used as markers to evaluate the impact of the transfer process on the developed HEMT.