Coupled Time Resolved and High Frequency Modulated Photoluminescence probing surface passivation of highly doped ntype InP samples
Abstract
Electronic passivation of III-V surfaces is essential for applications in optoelectronic devices. A key aspect is the measurement of the surface recombination properties which can be done by various techniques including transient photoluminescence (TRPL) or luminescence quantum yield. We use a complementary approach combining TRPL and High Frequency Modulated Photoluminescence.
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