Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices - Archive ouverte HAL
Article Dans Une Revue Nature Nanotechnology Année : 2021

Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices

Résumé

Solution-processed semiconducting transition metal dichalcogenides are at the centre of an ever-increasing research effort in printed (opto)electronics. However, device performance is limited by structural defects resulting from the exfoliation process and poor inter-flake electronic connectivity. Here, we report a new molecular strategy to boost the electrical performance of transition metal dichalcogenide-based devices via the use of dithiolated conjugated molecules, to simultaneously heal sulfur vacancies in solution-processed transition metal disulfides and covalently bridge adjacent flakes, thereby promoting percolation pathways for the charge transport. We achieve a reproducible increase by one order of magnitude in field-effect mobility (µFE), current ratio (ION/IOFF) and switching time (τS) for liquid-gated transistors, reaching 10−2 cm2 V−1 s−1, 104 and 18 ms, respectively. Our functionalization strategy is a universal route to simultaneously enhance the electronic connectivity in transition metal disulfide networks and tailor on demand their physicochemical properties according to the envisioned applications.

Domaines

Matériaux
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Dates et versions

hal-03230465 , version 1 (19-05-2021)

Identifiants

Citer

Stefano Ippolito, Adam G. Kelly, Rafael Furlan de Oliveira, Marc Antoine Stoeckel, Daniel Iglesias, et al.. Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices. Nature Nanotechnology, 2021, 16 (5), pp.592-598. ⟨10.1038/s41565-021-00857-9⟩. ⟨hal-03230465⟩
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