Development of a reference wafer for on-wafer testing of extreme impedance devices - Archive ouverte HAL
Communication Dans Un Congrès Année : 2016

Development of a reference wafer for on-wafer testing of extreme impedance devices

Résumé

This paper describes the design, fabrication, and testing of an on-wafer substrate that has been developed specifically for measuring extreme impedance devices using an on-wafer probe station. Such devices include carbon nano-tubes (CNTs) and structures based on graphene which possess impedances in the k Omega range and are generally realised on the nano-scale rather than the micro-scale that is used for conventional onwafer measurement. These impedances are far removed from the conventional 50-Omega reference impedance of the test equipment. The on-wafer substrate includes methods for transforming from the micro-scale towards the nano-scale and reference standards to enable calibrations for extreme impedance devices. The paper includes typical results obtained from the designed wafer.

Dates et versions

hal-03224658 , version 1 (11-05-2021)

Identifiants

Citer

H. Votsi, I. Roch-Jeune, Kamel Haddadi, C. Li, Gilles Dambrine, et al.. Development of a reference wafer for on-wafer testing of extreme impedance devices. 88th ARFTG Microwave Measurement Symposium, ARFTG 2016, Dec 2016, Austin, United States. 4 p., ⟨10.1109/ARFTG.2016.7839719⟩. ⟨hal-03224658⟩
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