Impact of channel length on the operation of junctionless transistors with substrate biasing
Résumé
Junctionless transistors (JLTs) have promising advantages such as structural simplicity without PN-junctions and bulk conduction-based operation for the realization of advanced CMOS technologies. Here, channel length dependence on the operation of JLTs with substrate-biasing (Vgb) was investigated in detail. Parasitic series resistance (Rsd) was noticeably decreased as increasing Vgb. In addition, transconductance (gm), its derivative (dgm/dVgf) and on-drain current (Ion) in a short-channel JLT were significantly affected by the Vgb-modulated Rsd with charge coupling effects. This work provides important information for better understanding and true estimation of intrinsic JLT performance, for practical applications based on polycrystalline Si, III-V semiconductors and TMDs nano-materials as well as advanced logic devices.
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