Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6/Ar plasmas - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Surface Science Année : 2021

Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6/Ar plasmas

Résumé

A functional waveguide for photonic applications must fulfil some specific requirements in terms of dimension, shape, etch rate and roughness. In this study, Ge-Sb-Se thin films were etched using an Inductively Coupled Plasma reactor via fluorine-based chemistry. In a SF 6 plasma, etch rate and roughness highlight a micro masking effect which originates from the formation of SbF 3 , (Se)-Sb-F x and (Sb)-Se-F environments. The latter have been identified with in situ XPS. Systematically, a SF 6 plasma is associated with a quasi-isotropic profile and a rough surface. In a SF 6 /Ar plasma, the impact of pressure and the argon content has been investigated. The addition of argon affects directly the fluorine atom flux and the argon atom flux which were calculated using a global model. It was found that there is a strong coherence between the fluorine atom flux, the proportion of fluorine at the surface and the RMS roughness. A synergistic effect, between ion bombardment and reactive neutral species, is observed when varying both parameters. Surface is free of fluorinated products for a high percentage of argon (95%) and low-pressures (< 4mTorr). A smooth surface and a quasi-vertical profile were achieved in a SF 6 /Ar with a gas mixture ratio 5/95 and at a pressure of 1.5 mTorr.
Fichier principal
Vignette du fichier
ASS_Meyer_2021-1.pdf (2.78 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03194243 , version 1 (13-04-2021)

Identifiants

Citer

Thibaut Meyer, Aurelie Girard, Guillaume Le Dain, Ahmed Rhallabi, Emeline Baudet, et al.. Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6/Ar plasmas. Applied Surface Science, 2021, 549, pp.149192. ⟨10.1016/j.apsusc.2021.149192⟩. ⟨hal-03194243⟩
163 Consultations
126 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More