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Article Dans Une Revue Advanced Electronic Materials Année : 2020

2D Semiconductor Transistors with Van der Waals Oxide MoO 3 as Integrated High‐κ Gate Dielectric

Marie-Hélène Berger
Xuan Gao
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hal-03193521 , version 1 (08-04-2021)

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Brian Holler, Kyle Crowley, Marie-Hélène Berger, Xuan Gao. 2D Semiconductor Transistors with Van der Waals Oxide MoO 3 as Integrated High‐κ Gate Dielectric. Advanced Electronic Materials, 2020, 6 (10), pp.2000635. ⟨10.1002/aelm.202000635⟩. ⟨hal-03193521⟩
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