Low-Temperature-Grown Gallium Arsenide Photoconductors with Photoresponse Reaching 25 mA/W under 1550nm Cw Excitation
Résumé
We show in this communication that photoconductors based on GaAs grown at low temperature can exhibit photoresponses as high as 25 mA/W under continuous-wave 1550-nm-wavelength illumination. It is achieved by using an optical Fabry-Pérot cavity in order to improve the external quantum efficiency and by decreasing the post growth annealing temperature down-to 450 °C.