Rare-earth doped micro-emitters made by lift-off processing in pulsed laser deposited layers on Si substrate - Archive ouverte HAL Access content directly
Journal Articles Optics Express Year : 2021

Rare-earth doped micro-emitters made by lift-off processing in pulsed laser deposited layers on Si substrate

Abstract

Rare earth emitters are promising in integrated optics but require complex integration on silicon. In this work, we have fabricated an Y 2 O 3 :Eu 3+ micro-emitter on SiO 2 on Si substrate without etching. Since pulsed laser deposition produces a high quality layer at room temperature, material can be locally deposited on top of substrates by lift-off processing. After annealing, microstructures exhibit good crystallographic quality with controlled dimensions for light confinement and narrow emission. This works allows envisioning rare-earth doped micro-photonic structures directly integrated on silicon without etching, which opens the way to integration of new functional materials on silicon platform.
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Dates and versions

hal-03183877 , version 1 (29-03-2021)

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Alban Gassenq, Etienne Cleyet-Merle, Hoshang Sahib, Bruno Baguenard, Ali Belarouci, et al.. Rare-earth doped micro-emitters made by lift-off processing in pulsed laser deposited layers on Si substrate. Optics Express, 2021, 29 (5), pp.7321-7326. ⟨10.1364/oe.416450⟩. ⟨hal-03183877⟩
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