Imprint issue during retention tests for HfO2 -based FRAM: An industrial challenge? - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2021

Imprint issue during retention tests for HfO2 -based FRAM: An industrial challenge?

Jordan Bouaziz
N. Baboux

Abstract

Note: This paper is part of the Special Topic on Materials and Devices Utilizing Ferroelectricity in Halfnium Oxide.
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Dates and versions

hal-03177059 , version 1 (22-03-2021)

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Jordan Bouaziz, Pedro Rojo Romeo, N. Baboux, Bertrand Vilquin. Imprint issue during retention tests for HfO2 -based FRAM: An industrial challenge?. Applied Physics Letters, 2021, 118 (8), pp.082901. ⟨10.1063/5.0035687⟩. ⟨hal-03177059⟩
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