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Communication Dans Un Congrès Année : 2021

Over 40W, X-Band GaN on SiC MMIC Amplifier

Résumé

In this paper we present the study and obtained results of a MMIC High Power Amplifier operating in X-band. The device is designed using 250nm GaN HEMT on SiC process. The targeted specifications include pulsed operation from 8 to 10.5GHz. In pulsed mode and 28V of drain voltage, an output power more than 40W with (37-40)% PAE has been achieved throughout the bandwidth, while remarkable 52.4W output power with associated 37% PAE has been recorded at 8.75GHz for a 32V of drain voltage. The HPA stability has been studied by considering the influence of external decoupling components and dedicated testing environment. © 2021 EuMA.
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Dates et versions

hal-03158264 , version 1 (03-03-2021)

Identifiants

  • HAL Id : hal-03158264 , version 1

Citer

C.A. Mjema, B. Haentjens, Erwan Fourn, M. Drissi, L.D. Arroyo, et al.. Over 40W, X-Band GaN on SiC MMIC Amplifier. 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. pp.265-268. ⟨hal-03158264⟩
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