High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Silicon Année : 2019

High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

Résumé

AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to reduce the effects of trapping and consequently has a large effect on these radio-frequency parameters. We used cold-FET and hot FET technique to extract the intrinsic and extrinsic parameters in order to show the effect passivation of parasitic elements; the parasitic capacitances, resistances and inductances. From this point we discover the extent of their impact on power and microwave performance.
Fichier principal
Vignette du fichier
Gassoumi_2019_Article_HighFrequencyAnalysisAndSmall-.pdf (3.58 Mo) Télécharger le fichier
Origine : Publication financée par une institution

Dates et versions

hal-03148960 , version 1 (24-05-2022)

Licence

Paternité

Identifiants

Citer

Moujahed Gassoumi, Abdelhamid Helali, Malek Gassoumi, Christophe Gaquière, Hassen Maaref. High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation. Silicon, 2019, 11 (1), pp.557-562. ⟨10.1007/s12633-018-9767-6⟩. ⟨hal-03148960⟩
22 Consultations
23 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More