Un-doped, Al-doped, and Sn-Al co-doped ZnO thin films have been successfully synthesized by Spray Pyrolysis method. Zinc Nitrate (Zn(NO₃)₂), Tin Chloride (SnCl₂) and Aluminum Nitrate (Al(NO₃)₃) were used as starting chemicals at different compositions. Films depositions were carried out on glass substrates at 350 °C. The X-ray diffraction confirmed that the Al-Sn co-doping did not change the ZnO Hexagonal Wurtzite structure. The obtained un-doped ZnO films were highly oriented along the preferential (002) crystallographic plane while the Sn- Al co-doped ZnO films were disoriented with slight loss of crystallinity. The optical measurement showed an increase of the average transmittance from 65 % to 81 % and the band gap energy (Eg) from 3.23 to 3.30 eV. The electrical conductivity has increased with the Al-Sn co-doping concentration to reach the value of 0.335 (Ω.cm)−1.