Band engineering and absorption spectra in compressively strained Ge 0.92 Sn 0.08 /Ge (001) double quantum well for infrared photodetection - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue physica status solidi (c) Année : 2014

Band engineering and absorption spectra in compressively strained Ge 0.92 Sn 0.08 /Ge (001) double quantum well for infrared photodetection

Résumé

We report a theoretical investigation of strained Ge1−xSnx/Ge (001)‐oriented quantum wells as a bulding block in active region of infrared photodetector. The electronic band parameters, gaps, discontinuities and effective masses for heterointerfaces between compressively strained Ge1−xSnx and relaxed Ge have beencomputed at room temperature. From this preliminary and mendatory work, we conclude that pseudomorphic Ge1−xSnx alloys become direct band gap semiconductors at a Sn‐fraction of 15.3%, e.g. a lattice mismatch as high as 2.3%. Due to achievable critical layer thickness and mainly solid solubility limit, a type‐I compressively strained Ge/Ge0.92Sn0.08/Ge (double) quantum well is studied by solving Schrödinger equation without and applied bias voltage. A strong absorption coefficient (> 1×104 cm−1) and a Stark shift of the direct transition between 2.01 μm and 2.25 μm at large external fields (40kV/cm) are attractive characteristics for the design of infrared photodetectors

Dates et versions

hal-03144555 , version 1 (02-03-2021)

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N. Yahyaoui, N. Sfina, J.-L. Lazzari, A. Bournel, M. Said. Band engineering and absorption spectra in compressively strained Ge 0.92 Sn 0.08 /Ge (001) double quantum well for infrared photodetection. physica status solidi (c), 2014, 11 (11-12), pp.1561-1565. ⟨10.1002/pssc.201400054⟩. ⟨hal-03144555⟩
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