Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications - Archive ouverte HAL Access content directly
Journal Articles Microelectronic Engineering Year : 2019
No file

Dates and versions

hal-03143596 , version 1 (16-02-2021)

Identifiers

Cite

Mohammad A. Alim, Mayahsa M. Ali, Ali A. Rezazadeh, Christophe Gaquière. Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications. Microelectronic Engineering, 2019, 209, pp.53-59. ⟨10.1016/j.mee.2019.03.011⟩. ⟨hal-03143596⟩
11 View
0 Download

Altmetric

Share

Gmail Facebook X LinkedIn More