Modeling and analysis of a broadband Schottky diode noise source up to 325 GHz based on 55-nm SiGe BiCMOS technology
Issa Alaji
(1)
,
Walid Aouimeur
,
Sylvie Lepilliet
(1, 2)
,
Daniel Gloria
(3)
,
Christophe Gaquière
(1, 4)
,
Francois Danneville
(1, 5)
,
Guillaume Ducournau
(1, 6)
,
Haitham Ghanem
(1)
,
Joao Carlos Azevedo Goncalves
(3)
,
Pascal Chevalier
(3)
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 ST-CROLLES - STMicroelectronics [Crolles]
4 PUISSANCE - IEMN - Puissance - IEMN
5 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN
6 PHOTONIQUE THZ - IEMN - Photonique THz - IEMN
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 ST-CROLLES - STMicroelectronics [Crolles]
4 PUISSANCE - IEMN - Puissance - IEMN
5 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN
6 PHOTONIQUE THZ - IEMN - Photonique THz - IEMN
Walid Aouimeur
- Fonction : Auteur
Sylvie Lepilliet
- Fonction : Auteur
- PersonId : 745478
- IdHAL : sylvie-lepilliet
Christophe Gaquière
- Fonction : Auteur
- PersonId : 746853
- IdHAL : christophe-gaquiere
- ORCID : 0000-0003-3082-2489
- IdRef : 059765615
Francois Danneville
- Fonction : Auteur
- PersonId : 747124
- IdHAL : francois-danneville
- ORCID : 0000-0002-4725-0010
Guillaume Ducournau
- Fonction : Auteur
- PersonId : 745611
- IdHAL : guillaume-ducournau
- ORCID : 0000-0002-9171-4767
- IdRef : 090868382
Pascal Chevalier
- Fonction : Auteur
- PersonId : 745101
- IdHAL : pascal-chevalier1
- ORCID : 0000-0003-1848-9986
- IdRef : 150176732
Résumé
In this article, the electrical model of a millimeter-wave (mmW), silicon-based noise source is developed in the frequency range up to 325 GHz. The model is studied as a function of the biasing current and the structure size. The noise source is based on a Schottky diode realized on the 55-nm SiGe BiCMOS technology from STMicroelectronics, Crolles, France. Due to the ability of being integrated on silicon, this noise source can be used for high-frequency in situ noise characterization of advanced silicon CMOS or bipolar technologies in the mmW range. In previous study, the diode was used as a noise source when biased near the avalanche regime, and an excess noise ratio (ENR) up to 20 dB has been achieved in a frequency range up to 260 GHz. In this article, the ENR value of the diode is retrieved from the electrical model and compared to the value extracted by measurements. The extracted ENR value was also studied for several diode sizes and biasing currents and measured up to 325 GHz, with a good agreement with the modeling.
Domaines
Sciences de l'ingénieur [physics]Format du dépôt | Notice |
---|---|
Type de dépôt | Article dans une revue |
Résumé |
en
In this article, the electrical model of a millimeter-wave (mmW), silicon-based noise source is developed in the frequency range up to 325 GHz. The model is studied as a function of the biasing current and the structure size. The noise source is based on a Schottky diode realized on the 55-nm SiGe BiCMOS technology from STMicroelectronics, Crolles, France. Due to the ability of being integrated on silicon, this noise source can be used for high-frequency in situ noise characterization of advanced silicon CMOS or bipolar technologies in the mmW range. In previous study, the diode was used as a noise source when biased near the avalanche regime, and an excess noise ratio (ENR) up to 20 dB has been achieved in a frequency range up to 260 GHz. In this article, the ENR value of the diode is retrieved from the electrical model and compared to the value extracted by measurements. The extracted ENR value was also studied for several diode sizes and biasing currents and measured up to 325 GHz, with a good agreement with the modeling.
|
Titre |
en
Modeling and analysis of a broadband Schottky diode noise source up to 325 GHz based on 55-nm SiGe BiCMOS technology
|
Auteur(s) |
Issa Alaji
1
, Walid Aouimeur
, Sylvie Lepilliet
1, 2
, Daniel Gloria
3
, Christophe Gaquière
1, 4
, Francois Danneville
1, 5
, Guillaume Ducournau
1, 6
, Haitham Ghanem
1
, Joao Carlos Azevedo Goncalves
3
, Pascal Chevalier
3
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1296 )
- [Univ. Lille, CNRS, Ecole Centrale Lille, Yncréa-ISEN, UVHC] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
2
PCMP - IEMN -
Plateforme de Caractérisation Multi-Physiques - IEMN
( 1067502 )
- France
3
ST-CROLLES -
STMicroelectronics [Crolles]
( 23639 )
- 850 rue Jean Monnet BP 16 38926 Crolles
- France
4
PUISSANCE - IEMN -
Puissance - IEMN
( 1067485 )
- Groupe Puissance - IEMN UMR8520
- France
5
ANODE - IEMN -
Advanced NanOmeter DEvices - IEMN
( 1067381 )
- Groupe ANODE (Composants et dispositifs nanométriques)
- France
6
PHOTONIQUE THZ - IEMN -
Photonique THz - IEMN
( 1067489 )
- Groupe Photonique THZ - IEMN UMR8520
- France
|
Nom de la revue |
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Date de publication électronique |
2020-03-31
|
Langue du document |
Anglais
|
Vulgarisation |
Non
|
Date de publication |
2020-06
|
Volume |
68
|
Numéro |
6
|
Page/Identifiant |
2268-2277
|
Projet(s) Européen(s) |
|
Financement |
|
Collaboration/Projet |
|
Domaine(s) |
|
DOI | 10.1109/TMTT.2020.2980513 |
UT key WOS | 000543022800031 |
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