Cl<sub>2</sub>/Ar based atomic layer etching of AlGaN layers - Archive ouverte HAL Access content directly
Journal Articles Journal of Vacuum Science & Technology A Year : 2019

Cl2/Ar based atomic layer etching of AlGaN layers

Abstract

This paper reports on atomic layer etching of several III-N materials such as GaN, AlN, AlGaN, and InAlGaN based on a sequential surface modification by chlorine adsorption followed by a low energy Ar plasma exposure to remove the modified layer using a reactive ion etching system. A study on the influence of several parameters, such as gas flow rates, removal step duration, RIE power and number of cycles on the etch per cycle, and the root-mean-square roughness, is performed. Low etch per cycle from 0.17 to 1.85 nm/cycle, respectively, for AlGaN and GaN and surfaces as smooth as the as-grown samples were obtained. The developed process is intended to be used for normally off GaN-based high electron mobility transistor processing.
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Dates and versions

hal-03139113 , version 1 (11-02-2021)

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Sébastien Aroulanda, Olivier Patard, Philippe Altuntas, Nicolas Michel, Jorge Pereira, et al.. Cl2/Ar based atomic layer etching of AlGaN layers. Journal of Vacuum Science & Technology A, 2019, 37 (4), pp.041001. ⟨10.1116/1.5090106⟩. ⟨hal-03139113⟩
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