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Journal Articles Journal of Magnetism and Magnetic Materials Year : 2020

A multifunctional standardized magnetic tunnel junction stack embedding sensor, memory and oscillator functionality

Abstract

The objective of this study is to co-integrate multiple digital and analog functions together within CMOS by developing a universal magnetic tunneling junction stack (MTJ) capable of realizing logic, memory, and analog functions, within a single baseline technology. This will allow monolithic heterogeneous integration, fast and low-power processing, and high integration density, particularly useful for Internet of Things (IoT) platforms. This unique spintransfer-torque (STT) MTJ is called Multifunctional Standardized Stack (MSS). This paper presents the progress regarding memory, oscillator and sensor functionalities targeted for the technology. We show that a single magnetic stack deposition can be used to obtain these three functionalities on the same wafer.
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Dates and versions

hal-03111526 , version 1 (23-04-2021)

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A. Chavent, V. Iurchuk, L. Tillie, Y. Bel, N. Lamard, et al.. A multifunctional standardized magnetic tunnel junction stack embedding sensor, memory and oscillator functionality. Journal of Magnetism and Magnetic Materials, 2020, 505, pp.166647. ⟨10.1016/j.jmmm.2020.166647⟩. ⟨hal-03111526⟩
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