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Article dans une revue IEEE Journal of Microwaves Année : 2021

SiGe HBTs and BiCMOS technology for present and future millimeter-wave system

Bjorn Debaillie
  • Fonction : Auteur
Akshay Visweswaran
  • Fonction : Auteur

Résumé

This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented, which have special advantages for addressing applications in the submillimeter-wave and THz range. The status of the technology process is reviewed and the integration challenges are examined. A detailed discussion on millimeter-wave characterization and modeling is given with emphasis on harmonic distortion analysis, power and noise figure measurements up to 190 GHz and 325 GHz respectively and S-parameter measurements up to 500 GHz. The results of electrical compact models of active (HBTs) and passive components are presented together with benchmark circuit blocks for model verification. BiCMOS-enabled systems and applications with focus on future wireless communication systems and high-speed optical transmission systems up to resulting net data rates of 1.55 Tbit/s are presented.
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Dates et versions

hal-03111157, version 1 (15-01-2021)

Licence

Paternité - CC BY 4.0

Identifiants

Citer

Thomas Zimmer, Josef Bock, Fred Buchali, Pascal Chevalier, Michael Collisi, et al.. SiGe HBTs and BiCMOS technology for present and future millimeter-wave system: [Invited]. IEEE Journal of Microwaves, 2021, 1 (1), pp.288-298. ⟨10.1109/jmw.2020.3031831⟩. ⟨hal-03111157⟩
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