Ferroelectric Gating of Narrow Band-Gap Nanocrystal Arrays with Enhanced Light Matter Coupling
Charlie Gréboval
(1)
,
Audrey Chu
(1)
,
Debora Vale Magalhaes
(2)
,
Julien Ramade
(2)
,
Junling Qu
(1)
,
Prachi Rastogi
(1)
,
Adrien Khalili
(1)
,
Sang-Soo Chee
(1)
,
Hervé Aubin
(3)
,
Grégory Vincent
(4)
,
Sara Bals
(2)
,
Christophe Delerue
(5, 6)
,
Emmanuel Lhuillier
(1, 7)
1
INSP-E6 -
Physico-chimie et dynamique des surfaces
2 Universiteit Antwerpen = University of Antwerpen [Antwerpen]
3 C2N - Centre de Nanosciences et de Nanotechnologies
4 DOTA, ONERA, Université Paris Saclay [Palaiseau]
5 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
6 PHYSIQUE - IEMN - Physique - IEMN
7 INSP - Institut des Nanosciences de Paris
2 Universiteit Antwerpen = University of Antwerpen [Antwerpen]
3 C2N - Centre de Nanosciences et de Nanotechnologies
4 DOTA, ONERA, Université Paris Saclay [Palaiseau]
5 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
6 PHYSIQUE - IEMN - Physique - IEMN
7 INSP - Institut des Nanosciences de Paris
Charlie Gréboval
- Fonction : Auteur
- PersonId : 791175
- ORCID : 0000-0002-0314-7273
- IdRef : 259881163
Audrey Chu
- Fonction : Auteur
- PersonId : 786082
- ORCID : 0000-0002-6905-7131
- IdRef : 25897351X
Julien Ramade
- Fonction : Auteur
- PersonId : 1288872
- IdHAL : julien-ramade
- ORCID : 0000-0003-3335-2603
Junling Qu
- Fonction : Auteur
- PersonId : 791174
- ORCID : 0000-0003-2504-1274
Prachi Rastogi
- Fonction : Auteur
- PersonId : 796975
- ORCID : 0000-0003-3535-0441
Adrien Khalili
- Fonction : Auteur
- PersonId : 801847
- ORCID : 0000-0001-5685-9963
- IdRef : 273924540
Sang-Soo Chee
- Fonction : Auteur
- PersonId : 800055
- ORCID : 0000-0001-9111-3358
Hervé Aubin
- Fonction : Auteur
- PersonId : 178763
- IdHAL : herve-aubin
- ORCID : 0000-0002-2061-3715
- IdRef : 180656252
Grégory Vincent
- Fonction : Auteur
- PersonId : 18817
- IdHAL : gregory-vincent
- ORCID : 0000-0003-1636-3853
- IdRef : 086281291
Sara Bals
- Fonction : Auteur
- PersonId : 778265
- ORCID : 0000-0002-4249-8017
Christophe Delerue
- Fonction : Auteur
- PersonId : 175246
- IdHAL : christophe-delerue
- ORCID : 0000-0002-0427-3001
- IdRef : 035741163
Emmanuel Lhuillier
- Fonction : Auteur
- PersonId : 11233
- IdHAL : emmanuel-lhuillier
- ORCID : 0000-0003-2582-1422
- IdRef : 148688950
Résumé
As narrow band gap nanocrystals become a viable building block for the design of infrared sensors, device design needs to match with their actual operating conditions. While in the near IR and shortwave infrared room temperature operation have been demonstrated, longer wavelengths still require low temperature operation requiring specific design. Here, we discuss how field-effect transistors (FETs) can be compatible with low temperature detection. To reach this goal two key developments are proposed. First, we report gating of nanocrystal films from SrTiO3 used as a ferroelectric material leading to high gate capacitance with leakage and breakdown free operation in the 4-100 K range. Secondly, we demonstrate that this FET is compatible with a plasmonic resonator which role is to achieve strong light absorption from a thin film used as the channel of the FET. Combining three resonances, broad band absorption from 1.5 to 3 µm reaching 30% is demonstrated. Finally combining gate and enhanced light matter coupling, we show that detectivity can be as high as 10 12 jones for a device presenting a 3 µm cutoff wavelength and 30 K operation.
Format du dépôt | Fichier |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
Ferroelectric Gating of Narrow Band-Gap Nanocrystal Arrays with Enhanced Light Matter Coupling
|
Résumé |
en
As narrow band gap nanocrystals become a viable building block for the design of infrared sensors, device design needs to match with their actual operating conditions. While in the near IR and shortwave infrared room temperature operation have been demonstrated, longer wavelengths still require low temperature operation requiring specific design. Here, we discuss how field-effect transistors (FETs) can be compatible with low temperature detection. To reach this goal two key developments are proposed. First, we report gating of nanocrystal films from SrTiO3 used as a ferroelectric material leading to high gate capacitance with leakage and breakdown free operation in the 4-100 K range. Secondly, we demonstrate that this FET is compatible with a plasmonic resonator which role is to achieve strong light absorption from a thin film used as the channel of the FET. Combining three resonances, broad band absorption from 1.5 to 3 µm reaching 30% is demonstrated. Finally combining gate and enhanced light matter coupling, we show that detectivity can be as high as 10 12 jones for a device presenting a 3 µm cutoff wavelength and 30 K operation.
|
Auteur(s) |
Charlie Gréboval
1
, Audrey Chu
1
, Debora Vale Magalhaes
2
, Julien Ramade
2
, Junling Qu
1
, Prachi Rastogi
1
, Adrien Khalili
1
, Sang-Soo Chee
1
, Hervé Aubin
3
, Grégory Vincent
4
, Sara Bals
2
, Christophe Delerue
5, 6
, Emmanuel Lhuillier
1, 7
1
INSP-E6 -
Physico-chimie et dynamique des surfaces
( 541975 )
- France
2
Universiteit Antwerpen = University of Antwerpen [Antwerpen]
( 147977 )
- Prinsstraat 13, 2000 Antwerpen
- Belgique
3
C2N -
Centre de Nanosciences et de Nanotechnologies
( 1041855 )
- 10 Boulevard Thomas Gobert, 91120, Palaiseau
- France
4
DOTA, ONERA, Université Paris Saclay [Palaiseau]
( 1042290 )
- 91120 Palaiseau
- France
5
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
6
PHYSIQUE - IEMN -
Physique - IEMN
( 1067373 )
- Groupe Physique - (Physics group) - IEMN UMR8520
- France
7
INSP -
Institut des Nanosciences de Paris
( 101592 )
- Université Pierre et Marie Curie Case 840 4 place Jussieu 75252 Paris Cedex 05
- France
|
Date de publication |
2021-01-20
|
Date de publication électronique |
2021-01-07
|
Volume |
8
|
Numéro |
1
|
Page/Identifiant |
259–268
|
Nom de la revue |
|
Langue du document |
Anglais
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Référence interne |
|
Domaine(s) |
|
Projet(s) ANR |
|
Mots-clés |
en
narrow band-gap nanocrystals, ferroelectric, field-effect transistor, infrared, plasmonic resonator
|
DOI | 10.1021/acsphotonics.0c01464 |
Origine :
Fichiers produits par l'(les) auteur(s)
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