Time-resolved shear transformations in the transient plastic regime of sheared amorphous silicon - Archive ouverte HAL
Article Dans Une Revue Physical Review E Année : 2020

Time-resolved shear transformations in the transient plastic regime of sheared amorphous silicon

Résumé

The accumulation of shear transformations (STs) in space and time is responsible for plastic deformation in amorphous solids. Here we study the effect of finite strain rates on STs during simulations of athermal shear deformation in an atomistic model of amorphous silicon. We present a time-resolved analysis of STs by mapping the plastic events identified in the atomistic simulations on a collection of Eshelby inclusions, which are characterized in terms of number, effective volume, lifetime, and orientation. Our analysis led us to distinguish between small and large events. We find that the main effect of a lower strain rate is to allow for a larger number of small events, roughly identified by an effective volume γ0V0<20 Å3, while the number and characteristics of larger events are surprisingly independent of the strain rate. We show that at low strains, the decrease of the stress observed at lower strain rates is mainly due to the excess of small events, while at larger strains, when the glass approaches the yield point where a shear band forms, larger events start to play a role and organize due to their elastic interactions. This phenomenology is compared with the predictions of mesoscale elastoplastic models. The technique developed here can be used as a systematic tool to analyze plasticity during molecular dynamics simulations. It can also give valuable information to develop physically grounded mesoscale models of plasticity, providing quantitative predictions of the mechanical properties of amorphous materials.
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Dates et versions

hal-03093892 , version 1 (04-01-2021)

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Tristan Albaret, Francesca Boioli, David Rodney. Time-resolved shear transformations in the transient plastic regime of sheared amorphous silicon. Physical Review E , 2020, 102 (5), pp.053003. ⟨10.1103/PhysRevE.102.053003⟩. ⟨hal-03093892⟩
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