Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA
Arun Bhaskar
(1)
,
Justine Philippe
(1)
,
Vanessa Avramovic
(1, 2)
,
Flavie Braud
(1, 3)
,
J.F. Robillard
(1, 4)
,
Cédric Durand
(5)
,
Daniel Gloria
(5)
,
Christophe Gaquière
(1, 6)
,
Emmanuel Dubois
(1, 4)
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 CMNF - IEMN - Centrale de Micro Nano Fabrication - IEMN
4 MICROELEC SI - IEMN - Microélectronique Silicium - IEMN
5 ST-CROLLES - STMicroelectronics [Crolles]
6 PUISSANCE - IEMN - Puissance - IEMN
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 CMNF - IEMN - Centrale de Micro Nano Fabrication - IEMN
4 MICROELEC SI - IEMN - Microélectronique Silicium - IEMN
5 ST-CROLLES - STMicroelectronics [Crolles]
6 PUISSANCE - IEMN - Puissance - IEMN
Justine Philippe
- Fonction : Auteur
- PersonId : 748512
- IdHAL : justine-philippe
- ORCID : 0000-0001-7466-8327
Vanessa Avramovic
- Fonction : Auteur
- PersonId : 1305447
- IdHAL : vanessaavramovic
- ORCID : 0000-0002-0259-5373
Flavie Braud
- Fonction : Auteur
- PersonId : 746842
- IdHAL : flavie-braud
- ORCID : 0000-0001-8807-6007
J.F. Robillard
- Fonction : Auteur
- PersonId : 747199
- IdHAL : jean-francois-robillard
- ORCID : 0000-0002-7170-7535
- IdRef : 132947110
Cédric Durand
- Fonction : Auteur
- PersonId : 763938
- ORCID : 0000-0002-1279-4966
Christophe Gaquière
- Fonction : Auteur
- PersonId : 746853
- IdHAL : christophe-gaquiere
- ORCID : 0000-0003-3082-2489
- IdRef : 059765615
Emmanuel Dubois
- Fonction : Auteur
- PersonId : 738944
- IdHAL : emmanuel-dubois-iemn
- ORCID : 0000-0002-0347-010X
- IdRef : 134290291
Résumé
High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the fabrication of locally suspended membranes of inductors with handler silicon completely etched. Such flexible membranes suspended freely on the BOX show up to 92 % improvement in Q-factor for single turn inductor. The improvement in Q-factor is reported on large sized inductors due to reduced parallel capacitance which allows enhanced operation of inductors at high frequencies. A compact model extraction methodology has been developed to model inductor membranes. These membranes have been utilized for the improvement of noise performance of LNA working in the 4.9-5.9 GHz range. A 0.1 dB improvement in noise figure has been reported by taking an existing design and suspending the input side inductors of the LNA circuit. The substrate engineering method reported in this work is not only applicable to inductors but also to active circuits, making it a powerful tool for enhancement of RF devices.
Format du dépôt | Fichier |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA
|
Résumé |
en
High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the fabrication of locally suspended membranes of inductors with handler silicon completely etched. Such flexible membranes suspended freely on the BOX show up to 92 % improvement in Q-factor for single turn inductor. The improvement in Q-factor is reported on large sized inductors due to reduced parallel capacitance which allows enhanced operation of inductors at high frequencies. A compact model extraction methodology has been developed to model inductor membranes. These membranes have been utilized for the improvement of noise performance of LNA working in the 4.9-5.9 GHz range. A 0.1 dB improvement in noise figure has been reported by taking an existing design and suspending the input side inductors of the LNA circuit. The substrate engineering method reported in this work is not only applicable to inductors but also to active circuits, making it a powerful tool for enhancement of RF devices.
|
Auteur(s) |
Arun Bhaskar
1
, Justine Philippe
1
, Vanessa Avramovic
1, 2
, Flavie Braud
1, 3
, J.F. Robillard
1, 4
, Cédric Durand
5
, Daniel Gloria
5
, Christophe Gaquière
1, 6
, Emmanuel Dubois
1, 4
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1296 )
- [Univ. Lille, CNRS, Ecole Centrale Lille, Yncréa-ISEN, UVHC] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
2
PCMP - IEMN -
Plateforme de Caractérisation Multi-Physiques - IEMN
( 1067502 )
- France
3
CMNF - IEMN -
Centrale de Micro Nano Fabrication - IEMN
( 1067417 )
- Plateforme: Centrale de Micro Nano Fabrication CMNF - IEMN UMR8520 -
Membre du réseau RENATECH des grandes centrales de Micro Nano Fabrication
- France
4
MICROELEC SI - IEMN -
Microélectronique Silicium - IEMN
( 1067493 )
- Groupe Microélectronique Silicium - IEMN UMR8520
- France
5
ST-CROLLES -
STMicroelectronics [Crolles]
( 23639 )
- 850 rue Jean Monnet BP 16 38926 Crolles
- France
6
PUISSANCE - IEMN -
Puissance - IEMN
( 1067485 )
- Groupe Puissance - IEMN UMR8520
- France
|
Licence |
Paternité
|
Commentaire |
Renatech Network, Laboratoire commun ST-Microelectronics - IEMN
|
Langue du document |
Anglais
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Date de publication |
2020-08-27
|
Volume |
8
|
Page/Identifiant |
959-969
|
Nom de la revue |
|
Date de publication électronique |
2020-08-27
|
Domaine(s) |
|
Collaboration/Projet |
|
Projet(s) ANR |
|
Mots-clés |
en
CMOS, SOI, membranes, laser processing, inductors, LNA
|
DOI | 10.1109/JEDS.2020.3019884 |
UT key WOS | 000572616200003 |
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