Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz
Résumé
This paper reports a detailed approach towards optimization of on-wafer TRL calibration structures for sub-millimeter-wave characterization of a state-of-the-art InP technology, validated by thorough experimentation and electro-magnetic (EM) simulation. The limitations of the existing RF test structures for high frequency measurements beyond 110 GHz are analyzed through EM simulation. Using an optimization procedure based on calibration of raw EM simulated data, on-wafer TRL calibration structures were developed and fabricated in a subsequent run of this technology. Measurements could be achieved up to 500 GHz on the passive devices and up to 330 GHz on the InP DHBTs. The transistor measurements were validated by comparison with the HiCuM compact model simulation to 330 GHz for the InP DHBTs.
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