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Communication Dans Un Congrès Année : 2019

AlGaAs/InGaP MBE-grown heterostructures for 1.73eV Solar Cells With 18.7% Efficiency

Amadeo Michaud
  • Fonction : Auteur
Adrien Bercegol
  • Fonction : Auteur
Julie Goffard
Olivia Mauguin
Xavier Lafosse
  • Fonction : Auteur
Karolien Saliou
  • Fonction : Auteur
Stéphane Collin

Résumé

Today's most efficient III-V solar cells rely on InGaP materials and are mostly grown by metal organic vapor phase epitaxy (MOVPE). Here, we report on an AlGaAs-based solar cell grown by solid source molecular beam epitaxy (MBE), with a certified conversion efficiency of 18.7%, and a 1.73eV bandgap designed for Si-based dual junction tandem devices. Material characterizations were carried out using Hall effect, secondary-ion mass spectrometry (SIMS) and X-Ray diffraction for the optimization of growth parameters of two conventional homojunction AlGaAs and InGaP solar cells. External quantum efficiencies (EQE) and I-V measurements demonstrate issues related to n-type AlGaAs and p-type InGaP layers. We show an important efficiency increase by merging the best of each structure: a thick p-AlGaAs base with tunable bandgap, and a thin 50 nm InGaP emitter.
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Dates et versions

hal-03084900 , version 1 (16-11-2021)

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Citer

Ahmed Ben Slimane, Amadeo Michaud, Adrien Bercegol, Julie Goffard, Olivia Mauguin, et al.. AlGaAs/InGaP MBE-grown heterostructures for 1.73eV Solar Cells With 18.7% Efficiency. 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), Jun 2019, Chicago, United States. pp.3219-3223, ⟨10.1109/PVSC40753.2019.8981165⟩. ⟨hal-03084900⟩
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