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Article Dans Une Revue IEEE Transactions on Terahertz Science and Technology Année : 2020

High Q THz photonic crystal cavity on a low loss suspended Silicon platform

Résumé

In this work, we present an ultra-high Q cavity at Terahertz (THz) frequencies. The designed cavity is built on a low loss suspended silicon (Si) waveguide. The substrate removal under the waveguide and the use of optimized deep reactive ion etching processing is the main reason for observing very low losses of this design α< 0.09 dB/mm. This very low loss behavior of this designed platform is also demonstrated by the measurement of a 1D photonic wire crystal cavity with Q>18000. Different cavity layouts are adjusted in order to maximize the transmittance while maintaining high Q. A design with reduced number of etched crystal holes achieve a Q>1500 and high transmittance T>70%. These structures are presented at sub-mm waves (around 600GHz) for the design of a gas sensor in this frequency region, but the principles can be scaled and redesigned for other frequencies in the THz band.
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Dates et versions

hal-03065163 , version 1 (05-01-2021)

Identifiants

Citer

Elias Akiki, Marc Faucher, Mathias Vanwolleghem, Mattias Verstuyft, Bart Kuyken, et al.. High Q THz photonic crystal cavity on a low loss suspended Silicon platform. IEEE Transactions on Terahertz Science and Technology, 2020, pp.1-1. ⟨10.1109/TTHZ.2020.3019928⟩. ⟨hal-03065163⟩
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