Methods for Gibbs triple junction excess determination: Ti segregation in CoSi2 thin film - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Materials Science Année : 2020

Methods for Gibbs triple junction excess determination: Ti segregation in CoSi2 thin film

Résumé

Diffusion barriers play an important role in numerous phase formation processes. A well known example in microelectronics is the reactive diffusion growth of silicide thin films which are applied as contact materials. In this work, the effect of a Ti interlayer on the kinetics of the formation of CoSi by reactive diffusion is investigated. Therefore, Co(100 nm)/Ti(5 nm) deposited on Si(111) is annealed at various temperatures. Transmission electron microscopy and atom probe tomography allow
Fichier principal
Vignette du fichier
JMSC-D-19-07642_zschiesche_revised.pdf (1.98 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03060639 , version 1 (23-12-2020)

Identifiants

Citer

Hannes Zschiesche, Ahmed Charai, Claude Alfonso, Dominique Mangelinck. Methods for Gibbs triple junction excess determination: Ti segregation in CoSi2 thin film. Journal of Materials Science, 2020, 55 (27), pp.13177-13192. ⟨10.1007/s10853-020-04856-4⟩. ⟨hal-03060639⟩
40 Consultations
68 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More