Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Surface Science Année : 2020

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Résumé

InAlN as a functional inorganic material is a promising alternative to the commonly used InGaN in tunnel diodes and optoelectronic devices, due to its tunable wider range of energy bandgap (0.65-6.2 eV), thus empowering utilization of the whole solar spectrum. Moreover, high electron drift velocity and carrier concentration are considered as the most desirable prerequisite of indium-rich InAlN. N-polar indium-rich InAlN could be more beneficial due to the reverse direction of the polarization compared to Ga-polar. However, unanswered questions persist concerning growth evolution of N-polar indium-rich InAlN grown by organometallic chemical vapor deposition (OMCVD). In this study, energy dispersive X-ray spectroscopy (EDX) and high-angle annular dark-field (HAADF) imaging are used to characterize N-polar layer at nanometer scale in order to determine the evolution of the layer on (0001) sapphire substrate. Long nitridation of sapphire substrate leading to the formation of~2 nm AlON ultrathin interlayer, which relaxes strain at the InAlN/sapphire interface with assistance of a low-temperature AlN interlayer is observed. EDX analysis confirms that after strain relaxation of InAlN layer, the indium-incorporation has only a weak dependence on the polarity of the layer. The incorporation of indium at preferential sites is also discussed at length.
Fichier principal
Vignette du fichier
pagination_APSUSC_144086_Accepted_copy.pdf (2.09 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03050853 , version 1 (10-12-2020)

Identifiants

Citer

Prerna Chauhan, S. Hasenöhrl, A. Minj, M.P. Chauvat, Pierre Ruterana, et al.. Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer. Applied Surface Science, 2020, 502, pp.144086. ⟨10.1016/j.apsusc.2019.144086⟩. ⟨hal-03050853⟩
54 Consultations
94 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More